4
RF Device Data
Freescale Semiconductor
MRFE6S9135HR3 MRFE6S9135HSR3
Figure 1. MRFE6S9135HR3(HSR3) Test Circuit Schematic
Z11 0.202″
x 0.980
x 0.444
Taper
Z12 0.114″
x 0.444
Microstrip
Z13 0.145″
x 0.444
x 0.110
Taper
Z14 0.180″
x 0.110
Microstrip
Z15 0.585″
x 0.110
Microstrip
Z16 0.443″
x 0.065
Microstrip
Z17 0.274″
x 0.065
Microstrip
PCB Taconic RF-35, 0.030″, εr
= 3.5
Z1 0.263″
x 0.065
Microstrip
Z2 0.310″
x 0.065
Microstrip
Z3 0.910″
x 0.120
Microstrip
Z4 0.248″
x 1.020
x 0.120
Taper
Z5 0.363″
x 1.020
Microstrip
Z6 0.057″
x 1.120
Microstrip
Z7, Z8 0.823″
x 0.120
Microstrip
Z9 0.060″
x 0.980
Microstrip
Z10 0.149″
x 0.980
Microstrip
Z1
RF
INPUT
C1
C2
Z2
Z3
Z4
Z5
DUT
Z9
C14
C25
RF
OUTPUT
Z10
Z11
Z12
Z13
Z17
C6
B1
VBIAS
C3
Z6
R1
C7
C9
C8
C11
C10
C12
Z14
Z15
Z16
Z7
C15
C16
C17
C18
Z8
R2
C4
+
C5
R3
C19
+
VSUPPLY
C20
C21
C22
C23
C24
+
VSUPPLY
C13
Table 5. MRFE6S9135HR3(HSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short RF Bead
2743019447
Fair-Rite
C1, C6, C15, C20, C25
39 pF Chip Capacitors
ATC100B390JT500XT
ATC
C2, C14
0.8-8.0 pF Variable Capacitors, Gigatrim
27291SL
Johanson
C3
2.0 pF Chip Capacitor
ATC100B2R0JT500XT
ATC
C4
33 μF, 25 V Electrolytic Capacitor
EMVY250ADA330MF55G
Nippon Chemi-Con
C5, C16, C17, C18, C21,
C22, C23
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
C7, C8
6.8 pF Chip Capacitors
ATC100B6R8JT500XT
ATC
C9, C10, C11, C12, C13
4.7 pF Chip Capacitors
ATC100B4R7JT500XT
ATC
C19, C24
470 μF, 63 V Electrolytic Capacitors
EKME630ELL471MK25S
United Chemi-Con
R1, R3
3.3 Ω, 1/3 W Chip Resistors
CRCW12103R30FKEA
Vishay
R2
2.2 KΩ, 1/4 W Chip Resistor
CRCW12062201FKEA
Vishay
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MRFE6S9160HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9160HSR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9160HSR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 160W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HR5 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRFE6S9200HSR3 功能描述:射频MOSFET电源晶体管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
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